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期刊

ISSN	0913-5685
刊名	電子情報通信学会技術研究報告
参考译名	电子信息通信学会技术研究报告：可靠性
收藏年代	2000～2024

全部

2000	2001	2002	2003	2004	2005
2006	2007	2008	2009	2010	2011
2012	2013	2014	2015	2016	2017
2018	2019	2020	2021	2022	2023
2024

2018, vol.118, no.1	2018, vol.118, no.10	2018, vol.118, no.102	2018, vol.118, no.104	2018, vol.118, no.11	2018, vol.118, no.110
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题名	作者	出版年	年卷期
The Relationship between Polarization Switching and Subthreshold Behavior in HfO_2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study	Chengji JIN; Kyungmin JANG; Takuya SARAYA; Toshiro HIRAMOTO; Masaharu KOBAYASHI	2018	2018, vol.118, no.429
Simulation study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent Potential	Fei Mo; Yusaku Tagawa; Takuya Saraya; Toshiro Hiramoto; Masaharu Kobayashi	2018	2018, vol.118, no.429
[招待講演]強誘電体負性容量のマルチドメイン動力学とトランジスタ特性特性への影響	太田裕之; 池上努; 福田浩一; 服部淳一 ; 浅井栄大; 遠藤和彦; 右田真司; 鳥海明	2018	2018, vol.118, no.429
[招待講演]サブモノレイヤ法によるAlナノクラスタを埋め込んだ高信頼性強誘電体Hf_(0.5)Zr_(0.5)O_2膜の開発	山口直; 張田田; 大森和幸; 島田康弘; 国宗依信; 井手隆; 井上真雄; 松浦正純	2018	2018, vol.118, no.429
[招待講演]HfO_2/SiO_2 MOS積層構造中の界面ダイポール変調動作	宮田典幸; 奈良純; 山崎隆浩; 住田杏子; 佐野良介; 野平博司	2018	2018, vol.118, no.429
[招待講演]ナノインプリントによるハーフピッチ14nm直接パターニング	中杉哲郎	2018	2018, vol.118, no.429
[招待講演]固体量子情報デバイスの実現に向けたシリコン同位体技術	宮本聡; 宇佐美徳隆; 伊藤公平	2018	2018, vol.118, no.429
[招待講演]5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減	更屋拓哉; 伊藤一夫; 高倉俊彦; 福井宗利; 鈴木慎一; 竹内潔; 附田正則; 沼沢陽一郎; 佐藤克己; 末代知子; 齊藤涉; 角嶋邦之; 星井拓也; 古川和由; 渡辺正裕; 執行直之; 筒井一生; 岩井洋; 小椋厚志; 西澤伸一; 大村一郎; 大橋弘通; 平本俊郎	2018	2018, vol.118, no.429
[招待講演]強誘電体トランジスタで観測される急峻スロープ特性の解析	右田真司; 太田裕之; 鳥海明	2018	2018, vol.118, no.429
[招待講演]負性容量効果をどのように理解するか	李秀研; 鳥海明	2018	2018, vol.118, no.429