中国机械工程学会生产工程分会知识服务平台

期刊


ISSN1555-130X
刊名Journal of Nanoelectronics and Optoelectronics
参考译名纳米电子与光电子杂志
收藏年代2006～2023



全部

2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023

2008, vol.3, no.2 2008, vol.3, no.3

题名作者出版年年卷期
Perpendicular Recording with Reduced Skew Angle SensitivityE. Stefanescu; N. Amos; R. Ikkawi; B. Lee; R. Chomko; D. Litvinov; S. Khizroev20082008, vol.3, no.3
Simulation of Heat Conduction in Suspended Graphene Flakes of Variable ShapesSamia Subrina; Dmitri Kotchetkov20082008, vol.3, no.3
The Effect of Ion Implantation on Magnetic Properties of CoPd Multilayer Structures Possessing Perpendicular AnisotropyA. Krichevsky; A. Lavrenov; N. Amos; B. Hu; K. Taylor; S. Khizroev20082008, vol.3, no.3
Hybrid CMOS/Nanoelectronic Circuits: Opportunities and ChallengesKonstantin K. Likharev20082008, vol.3, no.3
Thermal Transport in Gallium Nitride Materials and HeterostructuresJie Zou20082008, vol.3, no.3
Photoluminescence Investigation of the Effects of Barrier Thickness and Monolayer Coverage on Properties of Bilayer InAs/GaAs Quantum DotsS. Chakrabarti; N. Halder; S. Sengupta; Jayant Charthad; Sandip Ghosh; C. R. Stanley20082008, vol.3, no.3
Application of Generalized Quantum Hydrodynamics in the Theory of Quantum Soliton's EvolutionBoris V. Alexeev20082008, vol.3, no.3
Characterization of Nanowire CMOS Amplifiers Using Fully Depleted Surrounding Gate TransistorsSotoudeh Hamedi-Hagh; Ahmet Bindal20082008, vol.3, no.3
Two Dimensional Analytical Potential Modeling of Nanoscale Fully Depleted Metal Gate Double Gate MOSFETS. K. Vishvakarma; A. K. Saxena; S. Dasgupta20082008, vol.3, no.3
Design and Analysis of a 20 Gbps Metal-Insulator-Field Effect Transistor Photoreceiver for the OptoElectronic Integrated Circuit Receiver ApplicationsK. Balasubadra; V. Rajamani; K. Sankaranarayanan20082008, vol.3, no.3
123



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  机械工业信息研究院 2018-2024