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期刊
ISSN
1555-130X
刊名
Journal of Nanoelectronics and Optoelectronics
参考译名
纳米电子与光电子杂志
收藏年代
2006~2023
全部
2006
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2023
2010, vol.5, no.1
2010, vol.5, no.2
2010, vol.5, no.3
题名
作者
出版年
年卷期
Structural and Optoelectronic Characteristics of Well-Aligned ZnO Nanorod Arrays for Photodiodes
Liang-Wen Ji; Te-Hua Fang; Cheng-Zhi Wu; Tung-Te Chu; Huilin Jiang; Shoou-Jinn Chang; Shi-Ming Peng; Jingchang Zhong; Wen-Yang Chang
2010
2010, vol.5, no.3
The Generalized Relativistic Kinetic and Hydrodynamic Theory - Part I
Boris V. Alexeev; Irina V. Ovchinnikova
2010
2010, vol.5, no.3
An Improved Photoinduced Model for Silicon Based Microcantilever
P. K. Saxena
2010
2010, vol.5, no.3
Effects of the Magnetic Field on the Linear and Nonlinear Optical Absorption Coefficients and the Refractive Index Changes in a Spherical Quantum Dot
Muharrem Kirak; Sait Yilmaz; Mustafa Gencaslan
2010
2010, vol.5, no.3
The Generalized Relativistic Kinetic and Hydrodynamic Theory - Part II
Boris V. Alexeev; Irina V. Ovchinnikova
2010
2010, vol.5, no.3
Ultra Compact All Optical Logic Gates Using Photonic Band-Gap Materials
X. Susan Christina; A. P. Kabilan; P. Elizabeth Caroline
2010
2010, vol.5, no.3
Photo-Response of Electrostatically Deposited Bacteriorhodopsin Monolayer Films for Protein-Based Disk Recording Beyond 10 Tbit/in~2
Matthew Hudgins; John Butler; Robert Fernandez; Frederick T. Gertz; Matthew J. Ranaghan; Robert Birge; Robert C. Haddon; Sakhrat Khizroev
2010
2010, vol.5, no.3
Specialized Compression for Coping with Diffraction Effects in Protein-Based Volumetric Memories: Solving Some Challenging Instances
Dragos Trinca; Sanguthevar Rajasekaran
2010
2010, vol.5, no.3
High Frequency Transport of Two-Dimensional Hot Electrons in CdS Quantum Well with Inserted Barrier Layer
Sanjoy Deb; N. Basanta Singh; Asish Kumar De; S. K. Sarkar
2010
2010, vol.5, no.3
Impact of Gate Engineering on Gate Leakage Behavior of Nano Scale MOSFETs with High-k Dielectrics
Ashwani K. Rana; Narottam Chand; Vinod Kapoor
2010
2010, vol.5, no.3
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