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期刊
ISSN
1555-130X
刊名
Journal of Nanoelectronics and Optoelectronics
参考译名
纳米电子与光电子杂志
收藏年代
2006~2023
全部
2006
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2023
2010, vol.5, no.1
2010, vol.5, no.2
2010, vol.5, no.3
题名
作者
出版年
年卷期
Modeling Based Design of Graphene Heat Spreaders and Interconnects in 3-D Integrated Circuits
Samia Subrina
2010
2010, vol.5, no.3
A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile
Sarvesh Dubey; Pramod Kumar Tiwari; S. Jit
2010
2010, vol.5, no.3
Modeling and Estimation of Band to Band Tunneling Current for Nanoscale Metal Gate (Hf/AlN_x) Symmetric Double Gate MOSFET
S. K. Vishvakarma; V. Komal Kumar; A. K. Saxena; S. Dasgupta
2010
2010, vol.5, no.3
Design and Simulation of a Sequence Generator using Single Electron Devices and Hybrid Architecture
Debasis Samanta; Ankush Ghosh; Souvik Sarkar; Subir Kumar Sarkar
2010
2010, vol.5, no.3
Nanofocusing of Surface Plasmons at the Apex of Metallic Probe Tips
Andrey Petrin
2010
2010, vol.5, no.3
Performance Analysis of a Single-Electron Winner-Take-All Fully-Interconnected Network
Janaina Goncalves Guimaraes; Jose Camargo da Costa
2010
2010, vol.5, no.3
Preparation and Characteristics of Flexible Nanorod-Based Photodetectors
L. W. Ji; C. Z. Wu; T. H. Fang; S. M. Peng; S. J. Young; W. Water; T. H. Meen; C. H. Liu
2010
2010, vol.5, no.3
Synthesis of Nano-Structured Sb_2Te_3 Thin Films by Stacked Elemental Layer Method
S. Shanmugan; D. Mutharasu
2010
2010, vol.5, no.3
Impact of Gate Engineering on Gate Leakage Behavior of Nano Scale MOSFETs with High-k Dielectrics
Ashwani K. Rana; Narottam Chand; Vinod Kapoor
2010
2010, vol.5, no.3
High Frequency Transport of Two-Dimensional Hot Electrons in CdS Quantum Well with Inserted Barrier Layer
Sanjoy Deb; N. Basanta Singh; Asish Kumar De; S. K. Sarkar
2010
2010, vol.5, no.3
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