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ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2023



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2012, vol.112, no.1 2012, vol.112, no.103 2012, vol.112, no.109 2012, vol.112, no.112 2012, vol.112, no.113 2012, vol.112, no.114
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题名作者出版年年卷期
Formation of AlN layers on Si substrates and growth of 3C-SiCon AlN/Si substratesHideki NAKAZAWA; Daiki SUZUKI; Tsugutada NARITA; Yohei YAMAMOTO20122012, vol.112, no.265
スパッタ法にキるAZO薄膜の抵抗率の検討名越克仁; 富口祐輔; 清水英彦; 岩野春男; 川上貴浩; 福嶋康夫; 永田向太郎; 坪井望; 野本隆宏20122012, vol.112, no.265
H_2_O_2触媒反応生成高エネルギーH_2Oを用いてサファイア基板上に堆積したZnO薄膜の電気伝導特性の解析永冨瑛智; 山口直也; 竹内智彦; 里本宗一; 加藤孝弘; 安井寛治20122012, vol.112, no.265
非真空プロセスによるCu_2ZnSnS_4薄膜太陽電池の作製－窓層堆積条件の検討による効率の改善田中久仁彦; 相澤卓実; 打木久雄20122012, vol.112, no.265
Cu_2ZnSnS_4を用いた三次元構造太陽電池の作製黒川真登; 田中久仁彦; 加藤実; 長沼萌壮; 長橋由樹; 打木久雄20122012, vol.112, no.265
塩素フリー溶液を用いたゾルゲル·硫化法によるCu_2ZnSnS_4薄膜の作製佐久間広太; 田中久仁彦; 相澤卓実; 中野裕也; 打木久雄20122012, vol.112, no.265
CZTS薄膜太陽電池における硫化条件の最適化樋口健人; 鷲尾司; 神保和夫; 片桐裕則20122012, vol.112, no.265
Si基板上へのAlN層の形成およびSi/AlN上への3C-SiC成長中澤日出樹; 鈴木大樹; 成田次理; 山本陽平20122012, vol.112, no.265
MOVPE法により作製したSi基板上GaPの界面形状高木達也; 宮原亮; 高野泰20122012, vol.112, no.265
Ni/Si系におけるモノシリサイドとジシリサイドのマルチフェーズ形成野矢厚; 武山真弓; 佐藤勝; 徳田奨20122012, vol.112, no.265
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