中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2016, vol.116, no.1 2016, vol.116, no.100 2016, vol.116, no.102 2016, vol.116, no.103 2016, vol.116, no.114 2016, vol.116, no.118
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题名作者出版年年卷期
[依頼講演]強誘電体HfSiOキャパシタにおける形成プロセスと膜物性·電気特性の関係上牟田雄一; 藤井章輔; 高石理一郎; 井野恒洋; 中崎靖; 齋藤真澄; 小山正人20162016, vol.116, no.118
強誘電体ナノワイヤキャパシタの作製-高集積強誘電体メモリへの応用を目指して藤沢浩訓; 清水勝; 中嶋誠二20162016, vol.116, no.118
多段積層型トランジスタ構造を用いたFe-FET NAND論理の提案とそのロジックLSIへの適応検討渡辺重佳; 横田智広20162016, vol.116, no.118
ZrO_2/Al_2O_3/ZrO_2多層を用いたDRAMキャパシタにおけるAl_2O_3層が電気特性に及ぼす効果女屋崇; 生田目俊秀; 澤田朋実; 栗島一徳; 澤本直美; 大井暁彦; 知京豊裕; 小椋厚志20162016, vol.116, no.118
SiO_2の絶縁破壊と局所陽極酸化を用いた抵抗変化デバイス角嶋邦之; 若林整; 筒井一生; 岩井洋20162016, vol.116, no.118
Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価金田裕一; 兼松正行; 坂下満男; 竹内和歌奈; 中塚理; 財満鎭明20162016, vol.116, no.118
XPSによるSiO_2/半導体界面の電位変化およびダイポールの定量藤村信幸; 大田晃生; 渡辺浩成; 牧原克典; 宮崎誠一20162016, vol.116, no.118
リモート酸素プラズマ支援CVDによる低温SiO_2薄膜形成グェンスァンチュン; 藤村信幸; 竹内大智; 大田晃生; 牧原克典; 池田弥央; 宮崎誠一20162016, vol.116, no.118
タンタル酸ナノシート/SiO_2/Si界面バンドオフセットにおけるUV照射の効果速水脩平; 豊田智史; 福田勝利; 菅谷英生; 森田将史; 中田明良; 内本喜晴; 松原英一郎20162016, vol.116, no.118
HfO_2基強誘電体薄膜の作製と特性評価舟窪浩; 清水荘雄; 片山きりは; 三村和仙20162016, vol.116, no.118
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