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期刊

ISSN	0913-5685
刊名	電子情報通信学会技術研究報告
参考译名	电子信息通信学会技术研究报告：可靠性
收藏年代	2000～2023

全部

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2006	2007	2008	2009	2010	2011
2012	2013	2014	2015	2016	2017
2018	2019	2020	2021	2022	2023

2016, vol.116, no.1	2016, vol.116, no.100	2016, vol.116, no.102	2016, vol.116, no.103	2016, vol.116, no.114	2016, vol.116, no.118
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题名	作者	出版年	年卷期
Novel Pixel Structure with Stacked Deep Photodiode to Achieve High NIR Sensitivity and High MTF	Hiroki Takahashi; Hiroshi Tanaka; Masahiro Oda; Mitsuyoshi Ando; Naoto Niisoe; Shinichi Kawai; Takuya Asano; Mitsugu Yoshita; Tohru Yamada	2016	2016, vol.116, no.270
[Invited] Low-Noise Imaging Techniques for scientific CMOS Image Sensors	Min-Woong Seo; Shoji Kawahito	2016	2016, vol.116, no.270
［招待講演］超低電圧0.4V動作SOTB-CMOS回路のダイ間遅延ばらつきを抑制する基板バイアス制御技術	槇山秀樹; 山本芳樹; 長谷川拓実; 岡西忍; 前川径一; 新川田裕樹; 蒲原史朗; 杉井信之; 石橋孝一郎; 水谷朋子; 平本俊郎; 山口泰男	2016	2016, vol.116, no.270
［招待講演］最先端LSIプロセスにおける重金属汚染の制御	嵯峨幸一郎	2016	2016, vol.116, no.270
［依頼講演］基板バイアス技術を用いたSOTB 2Mbit SRAMの超低電圧動作	山本芳樹; 槇山秀樹; 長谷川拓実; 岡西忍; 前川径一; 新川田裕樹; 蒲原史朗; 山口泰男; 杉井信之; 水谷朋子; 平本俊郎	2016	2016, vol.116, no.270
原子層堆積法で成膜したAl_2O_3膜界面に及ぼす酸化種の影響	齋藤雅也; 諏訪智之; 寺本章伸; 黒田理人; 幸田安真; 杉田久哉; 林真里恵; 土本淳一; 石井秀和; 志波良信; 白井泰雪; 須川成利	2016	2016, vol.116, no.270
SiO_2上におけるウェットプロセスがペンタセン薄膜形成に与える影響	前田康貴; 廣木瑞葉; 大見俊一郎	2016	2016, vol.116, no.270
動作電圧変化時の過渡状態におけるランダムテレグラフノイズの挙動に関する研究	間脇武蔵; 寺本章伸; 黒田理人; 市野真也; 後藤哲也; 諏訪智之; 須川成利	2016	2016, vol.116, no.270
Si基板表面平坦化によるHf系MONOS構造の電気特性向上に関する検討	工藤聡也; 大見俊一郎	2016	2016, vol.116, no.270
高濃度ドーピングされた（100）方位SOIウェーハに対するSi選択エピタキシャル成長後の平坦な表面形成技術	古川貴一; 寺本章伸; 黒田理人; 諏訪智之; 橋本圭市; 須川成利; 鈴木大介; 千葉洋一郎; 石井勝利; 清水亮; 長谷部一秀	2016	2016, vol.116, no.270