中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2023



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023

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题名作者出版年年卷期
A 64Kb 16nm Asynchronous Disturb Current Free 2-Port SRAM with PMOS Pass-Gates for FinFET TechnologiesHidehiro FUJIWARA; Li-Wen WANG; Yen-Huei CHEN; Koo-Cheng LIN; Dar SUN; Shing-Run WU; Jhon-Jhy LIAW; Chih-Yung LIN; Mu-Chi CHIAN; Hung-Jen LIAO; Shien-Yang WU; Jonathan CHANG20162016, vol.116, no.3
Reliability Projecting for ReRAM based on Stochastic Differential EquationZhiqiang Wei; Koji Eriguchi; Shunsaku Muraoka; Koji Katayamat; Ryotaro Yasuhara; Kawai Ken; Yukio Hayakawa; Kazuhiko Shimakawa; Takumi Mikawa; Yoneda Shinichi20162016, vol.116, no.3
ReRAM Reliability Characterization and Improvement by Machine LearningTomoko Ogura IWASAKI; Sheyang NING; Hiroki YAMAZAWA; Chao SUN; Shuhei TANAKAMARU; Ken TAKEUCHI20162016, vol.116, no.3
Power reduction based on MRAMH. Yoda; N. Shimomura; S. Fujita20162016, vol.116, no.3
298-fJ/writecycle 650-fJ/readcycleを実現する画像処理プロセッサ向け28-nm FD-SOI 8T 3ポートSRAM森陽紀; 中川知己; 北原佑起; 河本優太; 高木健太; 吉本秀輔; 和泉慎太郎; 新居浩二; 川口博; 吉本雅彦20162016, vol.116, no.3
低消費電力MCU向け40-nm 4-Mb組込みSRAMを用いた効率的なテストスクリーニング手法良田雄太; 横山佳巧; 石井雄一郎; 稲田敏浩; 田中浩司; 田中美紀; 辻橋良樹; 新居浩二20162016, vol.116, no.3
ReRAMの抵抗スイッチ動作におけるフィラメント形成·消滅の透過電子顕微鏡内その場観察高橋庸夫; 工藤昌輝; 有田正志20162016, vol.116, no.3
IoT向け端末に組み込まれるコンパレータ回路のバイアス電流を最適化した0.6V動作ReRAM書き込み電圧生成回路田中誠大; 石井智也; 蜂谷尚悟; 寧渉洋; 竹内健20162016, vol.116, no.3
A Triple-Protection Structured COB FRAM with 1.2-V Operation and 10~(17)-Cycle Endurance齋藤仁; 杉町達也; 中村亘; 小澤聡一郎; 佐次田直也; 三原智; 彦坂幸信; 王文生; 堀智之; 高井一章; 中澤光晴; 小杉騰; 濱田誠; 川嶋将一郎20162016, vol.116, no.3
適応型リファレンス電圧生成回路を用いた1T1MTJ STT-MRAMセルアレイ設計小池洋紀; 三浦貞彦; 本庄弘明; 渡辺俊成; 佐藤英夫; 佐藤創志; 那須野孝; 野口靖夫; 安平光雄; 谷川高穂; 村口正和; 丹羽正昭; 伊藤顕知20162016, vol.116, no.3
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