中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2016, vol.116, no.1 2016, vol.116, no.100 2016, vol.116, no.102 2016, vol.116, no.103 2016, vol.116, no.114 2016, vol.116, no.118
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题名作者出版年年卷期
A 64Kb 16nm Asynchronous Disturb Current Free 2-Port SRAM with PMOS Pass-Gates for FinFET TechnologiesHidehiro FUJIWARA; Li-Wen WANG; Yen-Huei CHEN; Koo-Cheng LIN; Dar SUN; Shing-Run WU; Jhon-Jhy LIAW; Chih-Yung LIN; Mu-Chi CHIAN; Hung-Jen LIAO; Shien-Yang WU; Jonathan CHANG20162016, vol.116, no.3
Reliability Projecting for ReRAM based on Stochastic Differential EquationZhiqiang Wei; Koji Eriguchi; Shunsaku Muraoka; Koji Katayamat; Ryotaro Yasuhara; Kawai Ken; Yukio Hayakawa; Kazuhiko Shimakawa; Takumi Mikawa; Yoneda Shinichi20162016, vol.116, no.3
ReRAM Reliability Characterization and Improvement by Machine LearningTomoko Ogura IWASAKI; Sheyang NING; Hiroki YAMAZAWA; Chao SUN; Shuhei TANAKAMARU; Ken TAKEUCHI20162016, vol.116, no.3
Power reduction based on MRAMH. Yoda; N. Shimomura; S. Fujita20162016, vol.116, no.3
298-fJ/writecycle 650-fJ/readcycleを実現する画像処理プロセッサ向け28-nm FD-SOI 8T 3ポートSRAM森陽紀; 中川知己; 北原佑起; 河本優太; 高木健太; 吉本秀輔; 和泉慎太郎; 新居浩二; 川口博; 吉本雅彦20162016, vol.116, no.3
低消費電力MCU向け40-nm 4-Mb組込みSRAMを用いた効率的なテストスクリーニング手法良田雄太; 横山佳巧; 石井雄一郎; 稲田敏浩; 田中浩司; 田中美紀; 辻橋良樹; 新居浩二20162016, vol.116, no.3
ReRAMの抵抗スイッチ動作におけるフィラメント形成·消滅の透過電子顕微鏡内その場観察高橋庸夫; 工藤昌輝; 有田正志20162016, vol.116, no.3
IoT向け端末に組み込まれるコンパレータ回路のバイアス電流を最適化した0.6V動作ReRAM書き込み電圧生成回路田中誠大; 石井智也; 蜂谷尚悟; 寧渉洋; 竹内健20162016, vol.116, no.3
A Triple-Protection Structured COB FRAM with 1.2-V Operation and 10~(17)-Cycle Endurance齋藤仁; 杉町達也; 中村亘; 小澤聡一郎; 佐次田直也; 三原智; 彦坂幸信; 王文生; 堀智之; 高井一章; 中澤光晴; 小杉騰; 濱田誠; 川嶋将一郎20162016, vol.116, no.3
適応型リファレンス電圧生成回路を用いた1T1MTJ STT-MRAMセルアレイ設計小池洋紀; 三浦貞彦; 本庄弘明; 渡辺俊成; 佐藤英夫; 佐藤創志; 那須野孝; 野口靖夫; 安平光雄; 谷川高穂; 村口正和; 丹羽正昭; 伊藤顕知20162016, vol.116, no.3
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