中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2016, vol.116, no.1 2016, vol.116, no.100 2016, vol.116, no.102 2016, vol.116, no.103 2016, vol.116, no.114 2016, vol.116, no.118
2016, vol.116, no.122 2016, vol.116, no.129 2016, vol.116, no.13 2016, vol.116, no.136 2016, vol.116, no.139 2016, vol.116, no.15
2016, vol.116, no.151 2016, vol.116, no.153 2016, vol.116, no.154 2016, vol.116, no.155 2016, vol.116, no.156 2016, vol.116, no.157
2016, vol.116, no.159 2016, vol.116, no.163 2016, vol.116, no.166 2016, vol.116, no.167 2016, vol.116, no.168 2016, vol.116, no.169
2016, vol.116, no.172 2016, vol.116, no.173 2016, vol.116, no.175 2016, vol.116, no.179 2016, vol.116, no.185 2016, vol.116, no.190
2016, vol.116, no.191 2016, vol.116, no.192 2016, vol.116, no.193 2016, vol.116, no.194 2016, vol.116, no.195 2016, vol.116, no.204
2016, vol.116, no.206 2016, vol.116, no.207 2016, vol.116, no.21 2016, vol.116, no.212 2016, vol.116, no.215 2016, vol.116, no.216
2016, vol.116, no.217 2016, vol.116, no.219 2016, vol.116, no.229 2016, vol.116, no.235 2016, vol.116, no.241 2016, vol.116, no.242
2016, vol.116, no.246 2016, vol.116, no.248 2016, vol.116, no.254 2016, vol.116, no.255 2016, vol.116, no.260 2016, vol.116, no.261
2016, vol.116, no.269 2016, vol.116, no.270 2016, vol.116, no.271 2016, vol.116, no.272 2016, vol.116, no.274 2016, vol.116, no.275
2016, vol.116, no.28 2016, vol.116, no.283 2016, vol.116, no.288 2016, vol.116, no.289 2016, vol.116, no.296 2016, vol.116, no.297
2016, vol.116, no.3 2016, vol.116, no.301 2016, vol.116, no.302 2016, vol.116, no.31 2016, vol.116, no.310 2016, vol.116, no.311
2016, vol.116, no.315 2016, vol.116, no.32 2016, vol.116, no.326 2016, vol.116, no.33 2016, vol.116, no.330 2016, vol.116, no.333
2016, vol.116, no.334 2016, vol.116, no.338 2016, vol.116, no.344 2016, vol.116, no.349 2016, vol.116, no.35 2016, vol.116, no.352
2016, vol.116, no.353 2016, vol.116, no.355 2016, vol.116, no.357 2016, vol.116, no.358 2016, vol.116, no.359 2016, vol.116, no.360
2016, vol.116, no.363 2016, vol.116, no.364 2016, vol.116, no.367 2016, vol.116, no.368 2016, vol.116, no.369 2016, vol.116, no.371
2016, vol.116, no.372 2016, vol.116, no.377 2016, vol.116, no.380 2016, vol.116, no.388 2016, vol.116, no.389 2016, vol.116, no.390
2016, vol.116, no.391 2016, vol.116, no.394 2016, vol.116, no.410 2016, vol.116, no.415 2016, vol.116, no.419 2016, vol.116, no.420
2016, vol.116, no.421 2016, vol.116, no.423 2016, vol.116, no.432 2016, vol.116, no.436 2016, vol.116, no.439 2016, vol.116, no.441
2016, vol.116, no.444 2016, vol.116, no.445 2016, vol.116, no.446 2016, vol.116, no.448 2016, vol.116, no.450 2016, vol.116, no.453
2016, vol.116, no.457 2016, vol.116, no.458 2016, vol.116, no.459 2016, vol.116, no.463 2016, vol.116, no.465 2016, vol.116, no.467
2016, vol.116, no.472 2016, vol.116, no.475 2016, vol.116, no.478 2016, vol.116, no.482 2016, vol.116, no.486 2016, vol.116, no.487
2016, vol.116, no.49 2016, vol.116, no.492 2016, vol.116, no.494 2016, vol.116, no.5 2016, vol.116, no.50 2016, vol.116, no.502
2016, vol.116, no.504 2016, vol.116, no.505 2016, vol.116, no.51 2016, vol.116, no.513 2016, vol.116, no.519 2016, vol.116, no.52
2016, vol.116, no.523 2016, vol.116, no.524 2016, vol.116, no.529 2016, vol.116, no.54 2016, vol.116, no.55 2016, vol.116, no.56
2016, vol.116, no.6 2016, vol.116, no.61 2016, vol.116, no.63 2016, vol.116, no.68 2016, vol.116, no.69 2016, vol.116, no.70
2016, vol.116, no.77 2016, vol.116, no.81 2016, vol.116, no.84 2016, vol.116, no.86 2016, vol.116, no.91 2016, vol.116, no.93
2016, vol.116, no.94 2016, vol.116, no.98 2016, vol.116, no.99

题名作者出版年年卷期
Development of recombination layer in Perovskite/Microcrystalline Si tandem solar cellsSong Zhang; Yasuaki Yishikawa; Itaru Raifuku; Tiphaine Bourgeteau; Yukiharu Uraoka; Erik Johnson; Martin Foldyna; Yvan Bonnassieux; Pere Roca i Cabarrocas20162016, vol.116, no.355
ミストCVD法で作製したGaSnO薄膜の特性評価福嶋大貴; 弓削政博; 木村睦; 松田時宜20162016, vol.116, no.355
新規レアメタルフリーAOS TFTの研究開発梅田鉄馬; 加藤雄太; 西本大樹; 松田時宜; 木村睦20162016, vol.116, no.355
IGZO薄膜素子の磁気抵抗効果に対する電極の影響符川明日香; 野村竜生; 松田時宜; 木村睦20162016, vol.116, no.355
GaSnO膜のHall効果測定今西恒太; 符川明日香; 松田時宜; 木村睦20162016, vol.116, no.355
薄膜生体刺激デバイスのin-vitro実験冨岡圭佑; 三宅康平; 松田時宜; 木村睦20162016, vol.116, no.355
薄膜コイルを用いたワイヤレス電力伝送山本友稀; 三澤慶悟; 松田時宜; 木村睦20162016, vol.116, no.355
金属酸化物抵抗変化型メモリにおけるデータ保持特性の外部ストレス耐性木下健太郎20162016, vol.116, no.355
第一原理計算による多結晶酸化物薄膜の抵抗変化メカニズムの検討森山拓洋; 肥田聡太; 山崎隆浩; 大野隆央; 岸田悟; 木下健太郎20162016, vol.116, no.355
自己整合四端子平面型メタルダブルゲート低温poly-Si TFTから成るガラス上のCMOSインバータ大澤弘樹; 原明人20162016, vol.116, no.355
123



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  京公网安备11010202008970号  机械工业信息研究院 2018-2024