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期刊
ISSN
0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:可靠性
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2016, vol.116, no.1
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题名
作者
出版年
年卷期
General relationship for cation and anion doping effects on ferroelectric HfO_2 formation
L. Xu; S. Shibayama; K. Izukashi; T. Nishimura; T. Yajima; S. Migita; A. Toriumi
2016
2016, vol.116, no.448
[招待講演]サブ10nm世代負性容量FinFETのデバイスシミュレーション
太田裕之; 池上勉; 服部淳一; 福田浩一; 右田真司; 鳥海明
2016
2016, vol.116, no.448
[招待講演]等電子トラップ技術によるオン電流増大に伴う相補型トンネルトランジスタ回路の性能向上
森貴洋; 浅井栄大; 服部淳一; 福田浩一; 大塚慎太郎; 森田行則; 大内真一; 更田裕司; 右田真司; 水林亘; 太田裕之; 松川貴
2016
2016, vol.116, no.448
[招待講演]16/14nmノード以降における高速かつ高信頼性を有する混載フラッシュメモリ向けFinFET Split-Gate MONOS
津田是文; 川嶋祥之; 園田賢一郎; 吉富敦司; 三原竜善; 鳴海俊一; 井上真雄; 村中誠志; 丸山隆弘; 山下朋弘; 山口泰男; 久本大
2016
2016, vol.116, no.448
[招待講演]電圧トルクMRAM(VCM)向け読み出し/書き込み回路と大容量キャッシュメモリへの応用
塩田陽一; 野口紘希; 池上一隆; 安部恵子; 藤田忍; 野崎隆行; 湯浅新治; 鈴木義茂
2016
2016, vol.116, no.448
[招待講演]超低消費エネルギーと高集積性を併せ持っ電圧制御スピントロニクスメモリ-(Ultra-low Energy Consumption High-Density VoCSM)
奥田博明; 下村尚治; 大沢裕一; 白鳥聡志; 加藤侑志; 井口智明; 上口裕三; ブヤンダライアルタンサガイ; 斉藤好昭; 鴻井克彦; 杉山英行; 及川壮一; 清水真理子; 石川瑞恵; 池上一隆; 黒部篤
2016
2016, vol.116, no.448
[招待講演]多様化するアナログ信号処理に向けた新規機能性受動素子-VO_2揮発性スイッチの作製と応用
矢嶋赳彬; 西村知紀; 鳥海明
2016
2016, vol.116, no.448
[招待講演]Ge/III-V族半導体を用いたトンネルFET技術
高木信一; 安大煥; 野口宗隆; 後藤高寛; 西康一; 金閔洙; 竹中充一
2016
2016, vol.116, no.448
[招待講演]Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO_2
小林正治; 上山望; 蔣京珉; 平本俊郎
2016
2016, vol.116, no.448
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