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ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



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2010, vol.110, no.99

题名作者出版年年卷期
Integration of Novel Non-porous Low-k Dielectric Fluorocarbon into Advanced Cu InterconnectsXun Gu; Takenao Nemoto; Yugo Tomita; Akinobu Teramoto; Shin-Ichiro Kuroki; Shigetoshi Sugawa; Tadahiro Ohmi20102010, vol.110, no.241
Effect of gate insulator on the electrical properties of pentacene based organic field-effect transistorsM. Liao; H. Ishiwara; S. Ohmi20102010, vol.110, no.241
Effect of ultra-thin Yb layer on n-type characteristics of pentacene based MOS diodesY.-U. Song; H. Ishiwara; S. Ohmi20102010, vol.110, no.241
計算化学によるSi／SiC量子ドット太陽電池におけるキャリアトラップの解析広瀬祥; 山下格; 南雲亮; 三浦隆治; 鈴木愛; 坪井秀行; 畠山望; 遠藤明; 高羽洋充; 久保百司; 宮本明20102010, vol.110, no.241
Yb混晶化PtSiの仕事関数変調機構石川純平; 高峻; 大見俊一郎20102010, vol.110, no.241
Hf混晶化によるPtSiの高精度仕事関数制御に関する検討高峻; 石川純平; 大見俊一郎20102010, vol.110, no.241
材料情報学による母体結晶からのEu~(2+)付活蛍光体の発光特性予測大沼宏彰; 吉原大貴; 山下格; 南雲亮; 三浦隆治; 鈴木愛; 坪井秀行; 畠山望; 遠藤明; 高羽洋充; 久保百司; 宮本明20102010, vol.110, no.241
薄膜アモルファスシリコンの低温結晶化岩鍛治陽子; 広田潤; 矢吹宗; 石田浩一; 金子和香奈; 水島一郎; 赤堀浩史20102010, vol.110, no.241
連続発振レーザー結晶化poly-Si TFTにおける内部歪と電子移動度の評価藤井俊太朗; 黒木伸一郎; 小谷光司20102010, vol.110, no.241
ECRスパッタ法によるHfN／HfSiON積層構造のin-situ形成佐野貴洋; 大見俊一郎20102010, vol.110, no.241
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