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期刊
ISSN
0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:可靠性
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2010, vol.110, no.10
2010, vol.110, no.100
2010, vol.110, no.102
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题名
作者
出版年
年卷期
Effect of Temperature on the Formation of ZnS Nanostructures and Properties
Mani NAVANEETHAN; Jayaram ARCHANA; K. D. NISHA; Mukkannan ARIVANANDHAN; Suruttaiyaudaiyar PONNUSAMY; Chellamuthu MUTHAMIZHCHELVAN; Yasuhiro HAYAKAWA
2010
2010, vol.110, no.30
Effect of Gravity on the Growth of Alloy Semiconductor Bulk Crystals
Yasuhiro HAYAKAWA; Mukannan ARIVANANDHAN; Govindasamy RAJESH; Tadanobu KOYAMA; Yoshimi MOMOSE; Hisashi MORII; Toru AOKI; Akira TANAKA; Yasunori OKANO; Tetsuo OZAWA; Yuko INATOMI
2010
2010, vol.110, no.30
Single Photon Detection in Single Dot and Multi Dots Channel Phosphorus-Doped SOI-FET
Arief UDHIARTO; Daniel MORARU; Ryusuke NAKAMURA; Sakito MIKI; Takeshi MIZUNO; Michiharu TABE
2010
2010, vol.110, no.30
Charging phenomena of a single electron in P-doped Si SOI-MOSFETs
Earfan Hamid; Juli Cha Tarido; Sakito Miki; Daniel Moraru; Takeshi Mizuno; Michiharu Tabe
2010
2010, vol.110, no.30
青色EL素子用SrS:Cu薄膜のステップアニール効果
以西雅章; 加藤卓
2010
2010, vol.110, no.30
RFマグネトロンスパッタリング法によるLiMn_2O_4薄膜の生成条件の調査
中村光宏; 以西雅章
2010
2010, vol.110, no.30
シリコンを用いた単電子冷却デバイスの研究
池田浩也; ファイズサレ
2010
2010, vol.110, no.30
Ga_2O_3酸素センサの作製と評価
茅野真也; 山口直哉; 以西雅章
2010
2010, vol.110, no.30
Eu添加AlGaN/GaN HEMT構造を用いた発光素子の検討
近藤正樹; 秦貴幸; 岡田浩; 若原昭浩; 古川雄三; 佐藤真一郎; 大島武
2010
2010, vol.110, no.30
白金担持TiO_2薄膜の生成と光触媒特性
中村郁太; 伊藤達也; 以西雅章; 星陽一
2010
2010, vol.110, no.30
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