中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



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题名作者出版年年卷期
A novel method for crystallizations of aluminum nitridePeiTsen WU; Mitsuru FUNATO; Yoichi KAWAKAMI20132013, vol.113, no.331
ALD-Al_2O_3を有するInAlN MOS構造の電気的特性に対する作製プロセスの影響千葉勝仁; 中野拓真; 赤澤正道20132013, vol.113, no.331
ZrO_2/Al_2O_3積層膜をゲート絶縁膜に用いたn-GaN MISダイオードの界面特性樹神真太郎; 徳田博邦; 葛原正明20132013, vol.113, no.331
350nm紫外LED光取り出し効率改善に関する研究中嶋翼; 竹田健一郎; 岩谷素顕; 上山智; 竹内哲也; 赤﨑勇; 天野浩20132013, vol.113, no.331
電気化学的手法によるGaN多孔質構造の形成と光電極特性熊崎祐介; 渡部晃生; 谷田部然治; 佐藤威友20132013, vol.113, no.331
GaN-HEMTスイッチング回路における不要電磁波の放射特性の評価井手利英; 鍛冶良作; 清水三聡; 水谷研治; 上野弘明; 大塚信之; 上田哲三; 田中毅20132013, vol.113, no.331
InGaN半導体レーザのワット級高出力化とその応用展開萩野裕幸; 左文字克哉; 吉田真治; 瀧川信一; 森本廉; 瀧澤俊幸; 春日井秀紀; 山中一彦; 片山琢磨20132013, vol.113, no.331
内部集光レーザを用いた窒化物半導体デバイス用基板のそり制御-シリコン基板への応用青田奈津子; 会田英雄; 武田秀俊20132013, vol.113, no.331
表面活性化ボンディング法により形成したSi/SiCへテロ接合の電気特性西田将太; 梁剣波; 森本雅史; 重川直輝; 新井学20132013, vol.113, no.331
表面活性化ボンディング法によるタンデム太陽電池の作成梁剣波; 西田将太; 森本雅史; 重用直輝20132013, vol.113, no.331
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