中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2023



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题名作者出版年年卷期
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacksChih-Yu CHANG; Masafumi YOKOYAMA; Sang-Hyeon KIM; Osamu ICHIKAWA; Takenori OSADA; Masahiko HATA; Mitsuru TAKENAKA; Shinichi TAKAGI20132013, vol.113, no.87
4H-SiC MOS界面の電子スピン共鳴分光評価梅田享英; 岡本光央; 小杉亮治; 荒井亮; 佐藤嘉洋; 原田信介; 奥村元; 牧野高紘; 大島武20132013, vol.113, no.87
Al_2O_3/Ge構造における酸化機構の解明と界面反応がその特性に及ぼす影響柴山茂久; 加藤公彦; 坂下満男; 竹内和歌奈; 田岡紀之; 中塚理; 財満鎮明20132013, vol.113, no.87
酸化剤分圧およびSi拡散の制御によるPr酸化膜結晶構造制御加藤公彦; 坂下満男; 竹内和歌奈; 田岡紀之; 中塚理; 財満鎮明20132013, vol.113, no.87
Metal/High-k/Geゲートスタックにおけるジャーマナイド形成とその電気特性への影響細井卓治; 秀島伊織; 箕浦佑也; 田中亮平; 吉越章隆; 寺岡有殿; 志村考功; 渡部平司20132013, vol.113, no.87
HfO_2/Ge界面へのルチル型TiO_2挿入によるGeO_x生成の抑制小橋和義; 長田貴弘; 生田目俊秀; 山下良之; 小椋厚志; 知京豊裕20132013, vol.113, no.87
ゲートスタックへのHf導入によるメタル·ソース/ドレインGe p-MOSFETの高移動度化山本圭介; 佐田隆宏; 王冬; 中島寛20132013, vol.113, no.87
Fe_3Si/Geの界面構造によるSBHとスピン電流の変調:第一原理計算による理論的検討小日向恭祐; 中山隆史20132013, vol.113, no.87
MONOS型メモリを用いた長期保存メモリの設計指針白川裕規; 山口慶太; 神谷克政; 白石賢二20132013, vol.113, no.87
リモートH_2プラズマ支援によるCoPtナノドットの高密度形成と帯電·帯磁特性評価牧原克典; 福岡諒; 張海; 壁谷悠希; 大田晃生; 宮崎誠一20132013, vol.113, no.87
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