中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2013, vol.113, no.1 2013, vol.113, no.100 2013, vol.113, no.107 2013, vol.113, no.11 2013, vol.113, no.110 2013, vol.113, no.112
2013, vol.113, no.116 2013, vol.113, no.118 2013, vol.113, no.119 2013, vol.113, no.12 2013, vol.113, no.126 2013, vol.113, no.128
2013, vol.113, no.13 2013, vol.113, no.134 2013, vol.113, no.135 2013, vol.113, no.141 2013, vol.113, no.142 2013, vol.113, no.143
2013, vol.113, no.144 2013, vol.113, no.149 2013, vol.113, no.15 2013, vol.113, no.153 2013, vol.113, no.162 2013, vol.113, no.163
2013, vol.113, no.164 2013, vol.113, no.167 2013, vol.113, no.17 2013, vol.113, no.171 2013, vol.113, no.172 2013, vol.113, no.173
2013, vol.113, no.174 2013, vol.113, no.177 2013, vol.113, no.185 2013, vol.113, no.186 2013, vol.113, no.187 2013, vol.113, no.188
2013, vol.113, no.189 2013, vol.113, no.19 2013, vol.113, no.190 2013, vol.113, no.195 2013, vol.113, no.199 2013, vol.113, no.201
2013, vol.113, no.202 2013, vol.113, no.204 2013, vol.113, no.216 2013, vol.113, no.217 2013, vol.113, no.224 2013, vol.113, no.225
2013, vol.113, no.228 2013, vol.113, no.231 2013, vol.113, no.232 2013, vol.113, no.235 2013, vol.113, no.236 2013, vol.113, no.238
2013, vol.113, no.242 2013, vol.113, no.247 2013, vol.113, no.249 2013, vol.113, no.250 2013, vol.113, no.251 2013, vol.113, no.253
2013, vol.113, no.26 2013, vol.113, no.260 2013, vol.113, no.261 2013, vol.113, no.263 2013, vol.113, no.264 2013, vol.113, no.268
2013, vol.113, no.27 2013, vol.113, no.271 2013, vol.113, no.272 2013, vol.113, no.278 2013, vol.113, no.283 2013, vol.113, no.284
2013, vol.113, no.289 2013, vol.113, no.290 2013, vol.113, no.296 2013, vol.113, no.298 2013, vol.113, no.299 2013, vol.113, no.30
2013, vol.113, no.307 2013, vol.113, no.313 2013, vol.113, no.317 2013, vol.113, no.319 2013, vol.113, no.320 2013, vol.113, no.322
2013, vol.113, no.323 2013, vol.113, no.326 2013, vol.113, no.330 2013, vol.113, no.331 2013, vol.113, no.333 2013, vol.113, no.337
2013, vol.113, no.341 2013, vol.113, no.342 2013, vol.113, no.343 2013, vol.113, no.347 2013, vol.113, no.348 2013, vol.113, no.349
2013, vol.113, no.350 2013, vol.113, no.351 2013, vol.113, no.352 2013, vol.113, no.354 2013, vol.113, no.359 2013, vol.113, no.365
2013, vol.113, no.369 2013, vol.113, no.370 2013, vol.113, no.379 2013, vol.113, no.383 2013, vol.113, no.394 2013, vol.113, no.395
2013, vol.113, no.396 2013, vol.113, no.397 2013, vol.113, no.40 2013, vol.113, no.401 2013, vol.113, no.41 2013, vol.113, no.411
2013, vol.113, no.412 2013, vol.113, no.413 2013, vol.113, no.416 2013, vol.113, no.419 2013, vol.113, no.420 2013, vol.113, no.425
2013, vol.113, no.426 2013, vol.113, no.427 2013, vol.113, no.433 2013, vol.113, no.437 2013, vol.113, no.438 2013, vol.113, no.439
2013, vol.113, no.44 2013, vol.113, no.440 2013, vol.113, no.445 2013, vol.113, no.448 2013, vol.113, no.45 2013, vol.113, no.450
2013, vol.113, no.451 2013, vol.113, no.454 2013, vol.113, no.460 2013, vol.113, no.462 2013, vol.113, no.463 2013, vol.113, no.467
2013, vol.113, no.468 2013, vol.113, no.47 2013, vol.113, no.474 2013, vol.113, no.477 2013, vol.113, no.48 2013, vol.113, no.481
2013, vol.113, no.483 2013, vol.113, no.484 2013, vol.113, no.486 2013, vol.113, no.49 2013, vol.113, no.491 2013, vol.113, no.501
2013, vol.113, no.503 2013, vol.113, no.53 2013, vol.113, no.58 2013, vol.113, no.68 2013, vol.113, no.69 2013, vol.113, no.70
2013, vol.113, no.72 2013, vol.113, no.73 2013, vol.113, no.74 2013, vol.113, no.77 2013, vol.113, no.78 2013, vol.113, no.80
2013, vol.113, no.81 2013, vol.113, no.82 2013, vol.113, no.87 2013, vol.113, no.96 2013, vol.113, no.97 2013, vol.113, no.99

题名作者出版年年卷期
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacksChih-Yu CHANG; Masafumi YOKOYAMA; Sang-Hyeon KIM; Osamu ICHIKAWA; Takenori OSADA; Masahiko HATA; Mitsuru TAKENAKA; Shinichi TAKAGI20132013, vol.113, no.87
4H-SiC MOS界面の電子スピン共鳴分光評価梅田享英; 岡本光央; 小杉亮治; 荒井亮; 佐藤嘉洋; 原田信介; 奥村元; 牧野高紘; 大島武20132013, vol.113, no.87
Al_2O_3/Ge構造における酸化機構の解明と界面反応がその特性に及ぼす影響柴山茂久; 加藤公彦; 坂下満男; 竹内和歌奈; 田岡紀之; 中塚理; 財満鎮明20132013, vol.113, no.87
酸化剤分圧およびSi拡散の制御によるPr酸化膜結晶構造制御加藤公彦; 坂下満男; 竹内和歌奈; 田岡紀之; 中塚理; 財満鎮明20132013, vol.113, no.87
Metal/High-k/Geゲートスタックにおけるジャーマナイド形成とその電気特性への影響細井卓治; 秀島伊織; 箕浦佑也; 田中亮平; 吉越章隆; 寺岡有殿; 志村考功; 渡部平司20132013, vol.113, no.87
HfO_2/Ge界面へのルチル型TiO_2挿入によるGeO_x生成の抑制小橋和義; 長田貴弘; 生田目俊秀; 山下良之; 小椋厚志; 知京豊裕20132013, vol.113, no.87
ゲートスタックへのHf導入によるメタル·ソース/ドレインGe p-MOSFETの高移動度化山本圭介; 佐田隆宏; 王冬; 中島寛20132013, vol.113, no.87
Fe_3Si/Geの界面構造によるSBHとスピン電流の変調:第一原理計算による理論的検討小日向恭祐; 中山隆史20132013, vol.113, no.87
MONOS型メモリを用いた長期保存メモリの設計指針白川裕規; 山口慶太; 神谷克政; 白石賢二20132013, vol.113, no.87
リモートH_2プラズマ支援によるCoPtナノドットの高密度形成と帯電·帯磁特性評価牧原克典; 福岡諒; 張海; 壁谷悠希; 大田晃生; 宮崎誠一20132013, vol.113, no.87
123